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SiRA10DP
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
80
70
V GS = 10 V thru 4 V
20
16
60
50
40
30
20
V GS = 3 V
12
8
4
T C = 25 ° C
T C = 125 ° C
10
0
0
T C = - 55 ° C
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0050
0.0045
V D S - Drain-to- S ource Voltage (V)
Output Characteristics
V GS = 4.5 V
3000
2400
V GS - G ate-to- S ource Voltage (V)
Transfer Characteristics
C i ss
0.0040
1800
0.0035
1200
0.0030
0.0025
V GS = 10 V
600
C o ss
0.0020
0
C r ss
0
10
20
30
40
50
60
70
80
0
5
10 15 20 25
30
10
I D - Drain Current (A)
On-Resistance vs. Drain Current
1.6
V D S - Drain-to- S ource Voltage (V)
Capacitance
8
6
4
2
0
I D = 10 A
V D S = 15 V
V D S = 7.5 V
V D S = 24 V
1.4
1.2
1.0
0.8
0.6
I D = 10 A
V GS = 10 V
V GS = 4.5 V
0
7
14
21
28
35
- 50
- 25
0
25
50
75
100
125
150
Q g - Total G ate Charge (nC)
Gate Charge
T J - Junction Temperature ( ° C)
On-Resistance vs. Junction Temperature
S14-0158-Rev. B, 03-Feb-14
3
Document Number: 63820
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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